Multi-subband monte carlo modeling of nano-mosfets with strong vertical quantization and electron gas degeneration

摘要

This paper presents a new self-consistent MC simulator for the 2D electron gas of nano-MOSFETs. The simulator is two-dimensional in real space and in k-space, and accounts for the electron gas degeneracy in the k-plane. Simulations of thin-film SOI MOSFETs show that the subband structure and the carrier degeneracy strongly affect the transport properties particularly the injection velocity. Our results also point-out the strong anisotropy of the occupation function, which seriously hampers the use of simulators based on the momentum of the BTE