A novel temperature-dependent Gummel-Poon based large signal for accurate modeling of heterojunction bipolar transistors

摘要

A complete, simple, but accurate, temperature-dependent Gummel-Poon based model for heterojunction bipolar transistors is proposed. Polynomial and power relations are used to model the temperature dependence of the diode ideality coefficients and of the thermal resistance, respectively. The model includes Kirk and Early effects which are modeled using new approaches. The model parameters are extracted from Gummel forward and reverse measurements at various junction temperatures and fly-back measurements to determine with accuracy emitter and collector resistances. The model, implemented in an Agilent ADS circuit simulator, using a symbolically defined device (SDD), is verified by comparing the simulated and measured data in DC, multi-bias small-signal s-parameters and large-signal microwave power characteristics for a 2/spl times/20 /spl mu/m/sup 2/ emitter area InGaP/GaAs transistor.