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Reliability evaluation and comparison of Class-E and Class-A power amplifiers with 0.18 μm CMOS technology

机译:采用0.18μmCMOS技术的E类和A类功率放大器的可靠性评估和比较

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Circuit reliability of Class-E and Class-A power amplifiers are investigated based on a degradation sub-circuit model. In this study, we've found that Class-E amplifier degrades faster than Class-A amplifier, due to the relatively large switch stress voltage between gate to drain. The decrease of power added efficiency lead to the functional failure of a power amplifier.
机译:基于降级子电路模型,研究了E类和A类功率放大器的电路可靠性。在这项研究中,我们发现,由于栅极到漏极之间的开关应力相对较大,E类放大器的降级速度比A类放大器要快。功率附加效率的降低导致功率放大器的功能故障。

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