mercury compounds; cadmium compounds; II-VI semiconductors; elastic deformation; semiconductor epitaxial layers; electrical conductivity; ultrasonic effects; carrier mobility; electrical properties; electrophysical properties; thin film growth; LPE; MBE; high frequency elastic deformation effect; high intensity elastic deformation effect; conductivity; ultrasonically stimulated modification; Hg/sub 1-x/Cd/sub x/Te;
机译:利用通过两步退火工艺在GaAs衬底上生长的CdTe缓冲层提高Hg_(1-x)Cd_xTe外延层的结晶度和电性能
机译:CdTe缓冲层上生长的Hg0.7 sub> Cd0.3 sub> Te外延层的结构和电学性质对Hg / Te通量比的影响
机译:CdTe缓冲层上生长的原位退火Hg_(0.7)Cd_(0.3)Te外延层的微观结构和电学性质对退火温度和Hg细胞通量的依赖性
机译:超声波刺激的HG / Sub 1-X / CD / Sub X / Te ePilayers的电特性改性
机译:基于自适应有限元的二维Hg(1-x)Cd(x)Te异质结光伏探测器数值模拟
机译:开发无电池超声动力功能性电刺激器用于麻痹脊髓损伤后的运动恢复
机译:利用水平滑块生长LpE的HgCdTe外延层的特性