gallium arsenide; indium compounds; III-V semiconductors; tunnel diodes; Gunn devices; spectral analysers; harmonic generation; submillimetre wave mixers; submillimetre wave diodes; semiconductor device models; Monte Carlo methods; Fourier transform spectra; submillimetre wave spectra; submillimetre wave generation; GaAs tunnel injection transit time diodes; InP Gunn devices; second harmonic mode; submillimeter wave radiation generation; second harmonic power extraction; continuous wave radiation; harmonic mixers; Fourier transform terahertz spectra; spectrum analyzer; third harmonic generation; submillimeter wave frequency; submillimeter wave sources; 356 GHz; 400 to 560 GHz; 325 GHz; 235 GHz; 0.2 to 5 muW; GaAs; InP;
机译:使用GaAs TUNNETT二极管和InP Gunn器件以二次或更高谐波模式产生亚毫米波辐射
机译:InP Gunn器件和GaAs TUNNETT二极管在100-300 GHz和更高频率范围内的性能方面的最新进展
机译:GaAs Gunn器件在94 GHz频率下产生的基本功率和谐波功率的比较
机译:在第二个或更高谐波模式下使用GaAs Tunnett二极管和INP GUNN器件的杂交波辐射产生
机译:下一代中波红外级联发光二极管:GaAs和集成电路上的宽带,多光谱和单色器件的生长
机译:用于汽车工业的77 GHz GaAs耿氏二极管芯片的制造与表征
机译:Nb / n-InGaAs / p-InP超导体/半导体二极管发光器件中增强的光子生成
机译:D波段(110 GHz-170 GHz)的Inp Gunn设备的建模,设计,制造和测试