首页> 外文会议>Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on >Generation of submillimeter-wave radiation with GaAs TUNNETT diodes and InP Gunn devices in a second or higher harmonic mode
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Generation of submillimeter-wave radiation with GaAs TUNNETT diodes and InP Gunn devices in a second or higher harmonic mode

机译:使用GaAs TUNNETT二极管和InP Gunn器件以二次或更高次谐波模式产生亚毫米波辐射

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Efficient second-harmonic power extraction was demonstrated recently with GaAs TUNNETT diodes up to 235 GHz and with InP Gunn devices up to 325 GHz. This paper discusses the latest theoretical and experimental results from second-harmonic power extraction at submillimeter-wave frequencies and explores the potential of using power extraction at higher harmonic frequencies to generate continuous-wave radiation with significant output power levels at frequencies above 325 GHz. Initial experimental results are more than 50 /spl mu/W at 356 GHz from a GaAs TUNNETT diode in a third-harmonic mode and at least 0.2-5 /spl mu/W in the frequency range 400-560 GHz from InP Gunn devices in a third or higher harmonic mode. The spectral output of these submillimeter-wave sources was analyzed with a simple Fourier-transform terahertz spectrometer and, up to 415 GHz, with a spectrum analyzer and appropriate harmonic mixers.
机译:最近,高达235 GHz的GaAs TUNNETT二极管和高达325 GHz的InP Gunn器件证明了有效的二次谐波功率提取。本文讨论了在亚毫米波频率下二次谐波功率提取的最新理论和实验结果,并探讨了在更高谐波频率下使用功率提取来产生连续波辐射的潜力,该连续波辐射在325 GHz以上的频率下具有显着的输出功率水平。最初的实验结果是,在三次谐波模式下,GaAs TUNNETT二极管在356 GHz频率下的频率超过50 / spl mu / W,而在In- Gunn器件的400-560 GHz频率范围内,频率至少为0.2-5 / spl mu / W。三次或更高次谐波模式。这些亚毫米波源的光谱输出通过简单的傅立叶变换太赫兹光谱仪以及高达415 GHz的频谱分析仪和适当的谐波混频器进行了分析。

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