Fabrication of low cost Si-based tunable high performance resonant cavity enhanced photodetectors

摘要

Low cost Si-based tunable InGaAs RCE photodetectors operating at 1.3/spl sim/1.6 /spl mu/m were fabricated using sol-gel bonding. A tuning range of 14.5 nm, a quantum efficiency of 44% at 1476 nm and a 3-dB bandwidth of 1.8 GHz were obtained.