Three-dimensional multi-bridge-channel MOSFET (MBCFET) fabricated on bulk Si-substrate

摘要

In this paper, we demonstrate a novel single-bridge-channel MOSFET (SBCFET) and MBCFET, on a bulk Si-substrate, for the sub-90 nm generation, by using the multiple epitaxial growth of SiGe/Si/SiGe/Si layers and a damascene gate process. The double-gate structure of the MBCFET with thin body suppresses the short channel effects effectively without any halo implantation, providing a drive current that exceeds the required value of the ITRS roadmap. The MBCFET is one of the most promising candidates for high performance applications with high scalability.