pulse circuits; UHF oscillators; voltage-controlled oscillators; resonant tunnelling transistors; negative resistance devices; semiconductor heterojunctions; permeable base transistors; resonant tunneling based oscillator; pulsed oscillator; permeable base transistor; three terminal resonant tunneling transistor; embedded nanometer-sized metallic features; semiconductor heterostructures; resonant tunneling diodes; RT-PBT; negative differential region biasing; negative resistance oscillator; fundamental oscillation frequency; harmonics; gate voltage frequency control; voltage controlled oscillator; 800 MHz; 2.6 GHz;
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