LPP-based reflectometer for characterization of EUV lithography systems

摘要

An EUV reflectometer, based on a laser-produced plasma (LPP) light source, has been developed for characterization of EUV lithography systems. The reflectometer consists of the LPP light source, a prefocusing toroidal mirror, a grating monochromator, a polarizer, a beam intensity monitor, a refocusing toroidal mirror and a sample stage. The LPP light source is driven by a Nd:YAG laser; the laser beam is focused onto a copper tape target. A debris mitigation system that uses a rotating shutter was developed. Higher-orders from the grating monochromator were suppressed to less than 0.2% of incident beam intensity by total reflection of three grazing incidence mirrors. In order to compensate for beam intensity instability, a beam intensity monitor using a grating beamsplitter was installed between the refocusing mirror and the sample. Beam intensity instability can be corrected to less than 0.1% by using the beam intensity monitor.