2D QM simulation and optimization of decanano non-overlapped MOS devices

摘要

Two-dimensional quantum-mechanical (2D QM) simulations of non-overlapped MOS devices are presented, validated through comparison against experimental data. It is shown that 2D QM simulations are needed to accurately predict the experiments and can thus be used to explore the design trade-offs and optimize the performance. Simulations show that nonoverlapped MOS structures can provide an improvement in switching time up to about 50% with respect to conventional approaches.