Reliability investigations of 1.55 /spl mu/m bulk semiconductor optical amplifier using functional parameter measurements

机译：使用功能参数测量对1.55 / spl mu / m体半导体光放大器进行可靠性研究

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We report results of ageing tests (270 mA, 100/spl deg/C) applied to 1.55 /spl mu/m Semiconductor Optical Amplifier (SOA) of 500 /spl mu/m length active region for reliability investigations and show the strong relationship between functional parameters and their drifts versus ageing time.

机译：我们报告了寿命测试（270 mA，100 / spl deg / C）应用于1.55 / spl mu / m长度为500 / spl mu / m的有源区域的半导体光放大器（SOA）的可靠性研究，并显示了两者之间的密切关系功能参数及其漂移与老化时间的关系。

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《Indium Phosphide and Related Materials, 2003. International Conference on》|2003年|p.171-174|共4页
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Huyghe; S.; Bechou; L.; Danto; Y.; Laffitte; D.; Boddaert; X.; Volto; P.; Denolle; A.; Coquelin; A.; Ollivier; C.; Keller; D.; Porcheron; C.; Crottini; A.; Squedin; S.; Renaud; M.;
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中图分类无线电电子学、电信技术;
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semiconductor optical amplifiers; indium compounds; III-V semiconductors; ageing; semiconductor device reliability; gallium arsenide; reliability; 1.55 /spl mu/m bulk semiconductor optical amplifier; functional parameter measurements; 500 /spl mu/m lengt;

机译：半导体光放大器;铟化合物; III-V族半导体;老化;半导体器件可靠性;砷化镓;可靠性; 1.55 / spl mu / m体半导体光放大器;功能参数测量; 500 / spl mu / m lengt;

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专利

1. High performance 1.55 /spl mu/m polarisation-insensitive semiconductor optical amplifier based on low-tensile-strained bulk GaInAsP [J] . Emery J.-Y., Ducellier T. Electronics Letters . 1997,第12期

机译：基于低张力应变体GaInAsP的高性能1.55 / spl mu / m偏振不敏感半导体光放大器
2. Monolithic integration of spot-size converters with 1.3-/spl mu/m lasers and 1.55-/spl mu/m polarization insensitive semiconductor optical amplifiers [J] . Lestra A., Emery J.-Y. IEEE journal of selected topics in quantum electronics . 1997,第6期

机译：单点尺寸转换器与1.3- / splμ/ m激光器和1.55- / splμ/ m偏振不敏感半导体光放大器的单片集成
3. Electroluminescence spectroscopy for reliability investigations of 1.55 μm bulk semiconductor optical amplifier [J] . S. Huyghe, L. Bechou, N. Zerounian, Microelectronics & Reliability . 2005,第9a11期

机译：电致发光光谱法用于1.55μm体半导体光放大器的可靠性研究
4. Reliability investigations of 1.55 /spl mu/m bulk semiconductor optical amplifier using functional parameter measurements [C] . Huyghe S., Bechou L., Danto Y., International Conference on Indium Phosphide and Related Materials . 2003

机译：使用功能参数测量的1.55 / SPL MU / M散装半导体光放大器的可靠性调查
5. A study of the bulk optical and electronic properties of a thin film semiconductor as a function of the variation of the lattice parameter using time dependent current density functional theory. [D] . Davis, Gerald Mc Allister. 2009

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6. Numerical study of wavelength-swept semiconductor ring lasers: the role of refractive-index nonlinearities in semiconductor optical amplifiers and implications for biomedical imaging applications [O] . A. Bilenca, S. H. Yun, G. J. Tearney, -1

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7. Detailed experimental and theoretical investigation and comparison of the cascadability of semiconductor optical amplifier gates and gain-clamped semiconductor optical amplifier gates [O] . Danielsen Søren Lykke, Hansen Peter Bukhave, Wolfson David, 1998

机译：半导体光放大器门和增益钳位半导体光放大器门的级联性的详细实验和理论研究和比较

Reliability investigations of 1.55 /spl mu/m bulk semiconductor optical amplifier using functional parameter measurements

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