首页> 外文会议>Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th >Molecular beam epitaxial growth and characterization of In/sub 1-x/Ga/sub x/As/sub 1-y/Sb/sub y//In/sub 0.52/Al/sub 0.48/As strained quantum well structures on InP substrates

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Molecular beam epitaxial growth and characterization of In/sub 1-x/Ga/sub x/As/sub 1-y/Sb/sub y//In/sub 0.52/Al/sub 0.48/As strained quantum well structures on InP substrates

机译：InP衬底上In / sub 1-x / Ga / sub x / As / sub 1-y / Sb / sub y // In / sub 0.52 / Al / sub 0.48 / As应变量子阱结构的分子束外延生长和表征

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《Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th》|2002年|P.697-700|共4页
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Arnaw; M.; Kawamura; Y.; Fujimoto; M.;
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中图分类无线电电子学、电信技术;
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1. In_0.53Ga_0.47As/GaAs_0.5Sb_0.5/In_0.52Al_0.48As asymmetric type II quantum well structures lattice-matched to InP grown by molecular beam epitaxy [J] . Y. Kawamura, A. Kondo, M. Fujimoto Journal of Crystal Growth . 2002,第期

机译：In_0.53Ga_0.47As / GaAs_0.5Sb_0.5 / In_0.52Al_0.48As与分子束外延生长的InP晶格匹配的非对称II型量子阱结构
2. In_0.53Ga_0.47As/In_0.52Al_0.48the quantum wire structures grown on (775)B-oriented InP substrates by molecular beam epitaxy [J] . S. Hiyamizu, Y. Ohno, S. Shimomura Microelectronic Engineering . 1999,第1a4期

机译：In_0.53Ga_0.47As / In_0.52Al_0.48通过分子束外延在（775）B取向InP衬底上生长的量子线结构
3. Growth of ultra-high mobility In_(0.52)Al_(0.48)As/In_xGa_(1-x)As (x≥53%) quantum wells on Si substrates using InP/GaAs buffers by metalorganic chemical vapor deposition [J] . Qiang Li, Chak Wah Tang, Kei May Lau _Applied Physics Express . 2014,第4期

机译：使用InP / GaAs缓冲剂通过有机金属化学气相沉积在Si衬底上生长超高迁移率In_（0.52）Al_（0.48）As / In_xGa_（1-x）As（x≥53％）量子阱
4. Molecular beam epitaxial growth and characterization of In{sub}(1-x)Ga{sub}xAs{sub}(1-y)Sb{sub}y/In{sub}0.52Al{sub}0.48As strained quantum well structures on InP substrates [C] . M. Amano, Y. Kawamura, M. Fujimoto, Indium Phosphide and Related Materials Conference . 2002

机译：分子束外延生长和表征在{sub}（1-x）ga {sub} {sub}（1-y）sb {sub} y / sin {sub} 0.52al {sub} 0.48as紧张的量子井结构在INP基板上
5. Molecular beam epitaxial growth and characterization of strained quantum wires [D] . Chen, Yu-Pei. 1995

机译：分子束外延生长和应变量子线的表征
6. Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers [O] . Piotr Gutowski, Iwona Sankowska, Tomasz Słupiński, 2019

机译：InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
7. Lattice‐mismatched In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors on GaAs: Molecular‐beam epitaxial growth and device performance [O] . Kevin Chang, Pallab Bhattacharya, Richard Lai 1990

机译：栅格不匹配的In0.53Ga0.47as / In0.52al0.48as Gaas上的调制掺杂场效应晶体管：分子束外延生长和器件性能
8. Critical Examination of the Molecular-Beam-Epitaxial Growth of In(x)Ga(1-x)As/GaAs Strained Quantum Well Structures. [R] . Pamulapati, J., Oh, J. E., Debbar, N., 1989

机译：In（x）Ga（1-x）as / Gaas应变量子阱结构的分子束 - 外延生长的临界检验。

Molecular beam epitaxial growth and characterization of In/sub 1-x/Ga/sub x/As/sub 1-y/Sb/sub y//In/sub 0.52/Al/sub 0.48/As strained quantum well structures on InP substrates

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