An embedded 90 nm SONOS nonvolatile memory utilizing hot electron programming and uniform tunnel erase

摘要

In this work, a new compact SONOS Flash EEPROM device with fast programming, high reliability, and uniform erase is demonstrated. This device has been embedded into a 90 nm high performance CMOS logic process with an advanced copper backend. This device utilizes hot electron injection for programming and uniform channel tunneling for erase. Uniform tunnel erase prevents residual electron build up over the channel and avoids the reliability concerns of hot hole erase. A single bit is stored in each nonvolatile memory transistor.