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Reliability improvement of Cu/low-k dual damascene interconnects using the depo/etch barrier process by newly developed I-PVD

机译：新开发的I-PVD使用去离子/蚀刻阻挡层工艺提高了Cu / low-k双金属镶嵌互连的可靠性

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《Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International 》|2002年|P.268-270|共3页
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Motoyama K.; Faguet J.; Katsuki J.; Chung G.; Tonegawa T.; Miyamoto H.;
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中图分类无线电电子学、电信技术 ;
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1. 放电等离子体烧结Cu/Invar双金属基复合材料的工艺优化、显微结构与力学/热性能 [J] . 聂强强, 陈国宏, 汪冰, 中国有色金属学报：英文版 . 2021 ,第010期
2. 放电等离子体烧结Cu/Invar双金属基复合材料的工艺优化、显微结构与力学/热性能 [J] . 聂强强, 陈国宏, 汪冰, 中国有色金属学报（英文版） . 2021 ,第010期
3. Plasma-Etching Technology With In Situ Etched-Surf ace Modification for Highly Reliable Low-k/Cu Dual Damascene Interconnects [J] . Hiroto Ohtake, Shinobu Saito, Munehiro Tada, IEEE Transactions on Semiconductor Manufacturing . 2005 ,第4期

机译：具有原位蚀刻表面修饰的等离子蚀刻技术，可实现高度可靠的低k / Cu双镶嵌互连
4. Highly Reliable and Low Resistive Cu/Low-k Dual Damascene Interconnects by Using TaTi Barrier Metal [J] . K. Motoyama, K. Fujii ECS Journal of Solid State Science and Technology . 2012 ,第6期

机译：使用TaTi势垒金属的高可靠性和低电阻Cu / Low-k双金属镶嵌互连
5. Cu Dual-Damascene Interconnects with Direct Chemical Mechanical Polishing Process on Porous Low-k Film [J] . Junko Izumitani, rnDaisuke Kodama, rnShigenori Kido, Japanese journal of applied physics . 2010 ,第5issue3期

机译：铜双大马士革互连在低k多孔膜上的直接化学机械抛光工艺
6. Reliability improvement of Cu/low-k dual damascene interconnects using the depo/etch barrier process by newly developed I-PVD [C] . Motoyama K., Faguet J., Katsuki J., IEEE International Interconnect Technology Conference . 2002

机译：Cu / Low-K双镶嵌互连的可靠性改进使用DEPO /蚀刻屏障工艺通过新开发的I-PVD
7. Dual Damascene copper interconnects with low-k polymer dielectrics. [D] . Price, David Thomas. 1999

机译：双镶嵌铜与低k聚合物电介质互连。
8. Aqueous Based Single Wafer Cu/Low-k Cleaning Process Characterization and Integration into Dual Damascene Process Flow [O] . Jianshe Tang, Brian J. Brown, Steven Verhaverbeke, 2015

机译：水基单晶硅Cu / Low-k清洗工艺表征与双镶嵌工艺流程的集成

Reliability improvement of Cu/low-k dual damascene interconnects using the depo/etch barrier process by newly developed I-PVD

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