High-Speed Transparent Indium-Tin-Oxide Based Resonant Cavity Schottky Photodiode with Si_3N_4/SiO_2 Top Bragg Mirror

摘要

High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semi-transparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency AlGaAs/GaAs-based Schottky photodiodes using transparent indium-tin-oxide (ITO) Schottky contact material and resonant cavity enhanced (RCE) detector structure. Using a Si_3N_4/SiO_2 top Bragg mirror, we achieved a peak efficiency of 75% at 815 nm along with a 3-dB bandwidth of 60 GHz.