We have developed a new concept metal based package for lOGbps Electron Absorption driver IC. The size of packages needs to be downsized to al low high density assembly, in spite of the towards increasing zthe maximum power density for driver IC. To meet these difficult criteria, we used our chemical vapor deposition diamond heat-spreader in this package, which has the highest thermal conductivity of all materials, and we call it the "diamond package". Although the FET temperature of the diamond package reduced to the same as that of a conventional package, thermal simulation shows that the size of the diamond package could be decreased by 60% in comparison with that of a conventional package. We also ensured that theelectrical performance of the diamond package was equivalent to that of the convent ional package.
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