Investigation of high-current effects in staggered lineup InP/GaAsSb/InP heterostructure bipolar transistors: temperature characterization and comparison to conventional type-I HBTs and DHBTs

摘要

We study the mechanism giving rise to the "Kirk-like" f/sub T/ roll-off at very high-current densities in "type-II" lineup InP/GaAsSb/InP DHBTs, and we compare this mechanism to the behavior of conventional "type-I" SHBTs and DHBTs. Because of the type-II band lineup, the physical operation of InP/GaAsSb/InP DHBTs differs significantly from that of conventional devices. The present paper provides the first clarification of high current operation in these devices, as well as new experimental insights into the operation of conventional type-I DHBTs.