Reports, for the first time, an extensive experimental characterization of effective mobility (/spl mu//sub eff/) in ultra-thin SOI transistors operated in double gate mode. To this purpose we devised an experimental technique to determine the inversion density (N/sub inv/) and hence /spl mu//sub eff/ in SOI devices biased with arbitrary front- and back-gate voltages. Using this technique, we compared /spl mu//sub eff/ of the same samples biased either in single or double gate mode. For silicon thicknesses (T/sub SI/) of 10 nm and below a modest but unambiguous /spl mu//sub eff/ improvement in the double-gate mode is observed.
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机译：首次报道了在双栅极模式下工作的超薄SOI晶体管中有效迁移率（/ spl mu // sub eff /）的广泛实验表征。为了这个目的，我们设计了一种实验技术来确定SOI器件中的反向密度（N / sub inv /），从而确定/ spl mu // sub eff /，该SOI器件被任意正向和反向栅极电压偏置。使用此技术，我们比较了以单门或双门模式偏置的相同样本的/ spl mu // sub eff /。对于10nm及以下的硅厚度（T / sub SI /），在双栅模式下观察到适度但不明显的/ spl mu // sub eff /。
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