A 150 nm mask fabrication process using thin ZEP 7000 resist, GHOST and dry etch for the MEBES 5000 pattern generator

摘要

Advanced reticle specifications for critical dimension control (CD) and CD linearity of 150 nm generation devices requires significant improvements to the mask making process. zEP 7000 is an ebeam resist that exhibits good contrast properties and acceptable dry etch resistance while maintaining superior lithographic quality. In this paper, an advanced process utilizing thin ZEP 7000 resist and Inductively Coupled Plasma etching (ICP) will be described. The combinaton of these two unit processes describes a factorspace in mask making that is acceptable for the production of masks that meet the 150 nm ITRS roadmap requirements.