The Impact of Pattern Proximity Correction on Die-to-Database Inspection

摘要

While the semiconductor industry is following a very aggressive roadmap without a corresponding reduction in exposure wavelength, the role of resolution enhancement techniques like PSM (phase shift mask) and OPC (optical proximity correction) is becoming more and more important. Mask making for these advanced techniques is one of the most crucial parts in amking these techniques work. Mask inspection is one of the major challenges in the mask making process, as it is one of the most performance critical steps in the entire mask making process. Especially contact or OPC patterns show difficulties in die-to-database inspection as the CAD data asks for square corners. LPC is a mask enhancement technique improving image quality and CD linearity for laser pattern generators. The paper presents the impact of Laser Proximity Correction (LPC) on contact and line patterns of 0.18 mu m generation. The LBM (linewidth bias monitor) is used to characterize CD uniformity improvement over the entire plate.