Mask Critical Dimension Error on Optical Lithography

摘要

Optical lithography at resolution limit is a non-linear pattern transfer. One of the important issue is a mask critical dimension control because of nonlinear amplification of mask critical dimension error during image transferring on wafer. This amplification of mask error is called the MEF (Mask Error Factor). This mask error factor has been widely used as an important parameter fro indicating tighter CD (Critical Dimension) control of the photomask for low-k1 lithography generation.