The 193-nm photoresist development at union chem.labl. ITRI

摘要

Union CHemical laboratories has designed and synthesized novel copolymers of norbornene-alt-derivatives, maleic anhydride and alicyclic acrylate for ArF excminer laer lithography. Tese polymers are prepared using a free-radical copolymerization process. Applying the resin for 193-nm single layer chemically amplified photoresist composed of cholate derivative with a PAG leads to a good resolution below 0.13 mu m line/space patterns using an ArF stepper and 2.38wt