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The significance of controlling 'Off-Axis' (from 1-0-0) oriented Si wafers during high angle implants

机译：在大角度注入过程中控制“离轴”（从1-0-0）取向的硅片的重要性

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《Ion Implantation Technology, 2000. Conference on》|2000年|P.642-645|共4页
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Downey; D.F.; Arevalo; E.A.;
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中图分类无线电电子学、电信技术;
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机译：通过晶圆键合在两个具有受控旋转角度的CdTe（111）晶圆之间创建单个孪生边界
2. Creating a single twin boundary between two CdTe (111) wafers with controlled rotation angle by wafer bonding [J] . Ce Sun, Ning Lu, Jinguo Wang, Applied Physics Letters . 2013,第25期

机译：通过晶圆键合在两个具有受控旋转角度的CdTe（111）晶圆之间创建单个孪生边界
3. Nanohardness and contact angle of Si wafers implanted with N and C and Al alloy with N by plasma ion implantation [J] . Ueda M., Lepienski CM., Rangel EC., Surface & Coatings Technology . 2002,第1a3期

机译：通过等离子离子注入注入N和C的Si晶片和注入N的铝合金的纳米硬度和接触角
4. The significance of controlling “off-axis” (from 1-0-0)oriented Si wafers during high angle implants [C] . Downey D.F., Arevalo E.A., Eddy R.J., Ion Implantation Technology, 2000. Conference on . -1

机译：控制“离轴”的重要性（从1-0-0开始）大角度注入过程中的取向硅片
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