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An experimental and numerical study of the composition distribution of InGaAsP quaternary materials in a horizontal MOCVD reactor

机译：水平MOCVD反应器中InGaAsP四元材料组成分布的实验和数值研究

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A model was developed that enabled the simulation of composition and growth rate distributions of InGaAsP layers in a horizontal reactor. The model is based on kinetic data assessed by in-situ ellipsometry and FTIR spectrometry.

机译：开发了一种模型，使得在水平反应器中的InGaAsp层的成分和生长速率分布的模拟能够模拟。该模型基于原位椭圆形测量和FTIR光谱评估的动力学数据。

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《Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on 》|2000年|P.368-371|共4页
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Feron; O.; Sugiyama; M.;
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中图分类无线电电子学、电信技术 ;
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An experimental and numerical study of the composition distribution of InGaAsP quaternary materials in a horizontal MOCVD reactor

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