Impact of 0.10 /spl mu/m SOI CMOS with body-tied hybrid trench isolation structure to break through the scaling crisis of silicon technology

摘要

A hybrid-trench-isolation (HTI) technology is proposed to overcome the scaling limitations caused by the difficulty of gate thinning and increased soft error rate at the 0.1 /spl mu/m era. It is revealed that a significant speed improvement against bulk is achieved by using the body-tied structure without floating-body-relate speed deterioration. A two-order reduction in the soft error rate for an HTI-SOI 4M-bit SRAM was demonstrated as compared with bulk structure. Moreover, it is shown that full trench isolation in the HTI offers excellent isolation characteristics to realize the one-chip integration of analog and digital LSI's. It is concluded that SOI technology with HTI structure is one of the solutions against the scaling limitations.