首页> 外文会议>Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International >Picosecond ultrasonic study of the electrical and mechanical properties of CoSi/sub 2/ formed under Ti and TiN cap layers
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Picosecond ultrasonic study of the electrical and mechanical properties of CoSi/sub 2/ formed under Ti and TiN cap layers

机译:皮秒超声研究在Ti和TiN盖层下形成的CoSi / sub 2 /的电和机械性能

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We report noncontact measurements of CoSi/sub 2/ layers made using a commercial picosecond ultrasonic system. The layers were formed in a two step RTP-process beginning with samples with nominally 120 /spl Aring/ Co capped with either 150 /spl Aring/ PVD TiN, or 100 /spl Aring/ PVD Ti. The thickness, roughness and electrical resistivity of the final disilicide layers were investigated as functions of the first anneal temperature. The results indicate that the TiN-capped process yields a significantly smoother and more conductive disilicide film than the Ti-capped process over a wide range of first anneal temperatures.
机译:我们报告了使用商用皮秒超声系统进行的CoSi / sub 2 /层的非接触式测量。在两步RTP工艺中形成这些层,首先用标称120 / spl Aring / PVD ​​TiN或100 / spl Aring / PVD ​​TiN覆盖的标称120 / spl Aring / Co样品开始。研究了最终二硅化物层的厚度,粗糙度和电阻率与第一退火温度的关系。结果表明,在宽范围的第一退火温度下,TiN覆盖的工艺比Ti覆盖的工艺产生的硅化膜明显更光滑,导电性更好。

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