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Comparative investigations of the bolometric properties of thin film structures based on vanadium dioxide and amorphous hydrated silicon

机译:基于二氧化钒和非晶态水合硅的薄膜结构的辐射热性能的比较研究

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Abstract: A choice of sensitive element material for uncooled microbolometric array dependents on the ultimate array parameters to a great extent. This paper presents the results of studies of sandwich and planar bolometric structures based on aSi:H and VO$-2$/ films accordingly. The aSi:H films were fabricated by plasmachemical vapor-phase deposition and VO$-2$/ films were prepared by reactive magnetron ion-plasma sputtering. Sandwich structures with area 100 $MUL 100 $mu@m have a resistance of 20 k approximately ega and temperature coefficient of resistance (TCR) of $APEQ 2%/K at 25$DGR@C. Planar structures with operating section dimensions of 100 $MUL 70 $mu@m have TCR of 2.9%/K at the same resistance. The methods of contact noise reduction are found for both type structures. Sandwiches constructed to act as an optical cavity absorb 80% of radiation at 8 $mu@m wavelength. It is shown that the planar structures absorption of 50 - 80% can be reached in the 8.5 - 10 $mu@m band.!12
机译:摘要:用于非冷却微辐射热分析阵列的敏感元件材料的选择在很大程度上取决于最终的阵列参数。本文介绍了基于aSi:H和VO $ -2 $ /膜的夹心和平面辐射热分析结构的研究结果。通过等离子化学气相沉积制备了aSi:H薄膜,并通过反应磁控离子溅射制备了VO $ -2 $ /薄膜。面积为100 $ MUL 100 $ mu @ m的三明治结构的电阻约为ega,为20 k,在25 $ DGR @ C时的电阻温度系数(TCR)为$ APEQ 2%/ K。在相同电阻下,工作截面尺寸为100 $ MUL 70 $ mu @ m的平面结构的TCR为2.9%/ K。两种类型的结构都发现了降低接触噪声的方法。被构造成充当光学腔的三明治在8μm的波长下吸收80%的辐射。结果表明,在8.5-10μmu@ m波段中,可以达到50-80%的平面结构吸收率!12

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