Near-infrared photodetectors based on a HgInTe-semiconductor compound

摘要

Abstract: We present a new near-infrared photodetectors fabricated based on Hg$-3$/In$-2$/Te$-6$/ semiconductor compound. This ternary compound is a direct-gap n-type semiconductor with the band gap of 0.74 eV and carrier concentration about 10$+13$/ cm$+$MIN@3$/ at room temperature. Surface-barrier structures a transparent conducting metal oxide electrode-interfacial chemical grown oxide-semiconductor substrate with an active area from 3 to 50 mm$+2$/ have been fabricated by chemical oxidation of Hg$-3$/In$-2$/Te$-6$/ surface for the potential barrier's formation. The composition of oxide layer (40% In$- 2$/O$-3$/, 50% TeO$-2$/, and 10% HgO) was determined using XPS analysis. Tin-doped indium oxide (ITO) film (as transparent conducting electrode) was deposited over this layer by magnetron RF sputtering technique. The devices are very sensitive to light with the wavelength from 0.4 to 1.7 micrometer. A self-calibrated photodetectors, which permit 100% external quantum efficiency (within error not exceeding 2%) at wavelengths of 1.3 and 1.5 micrometer, have been developed. The photodetectors fabricated on thin Hg$-3$/In$- 2$/Te$-6$/ substrates have a low producing price and can be fabricated with a large photosensitive area. Photodetectors with an active area of 3 mm$+2$/ exhibit the rise and fall times from 2 to 4 ns under 1.3 micrometer pulse irradiation. Both basic material aspects and devices fabrication technique is detailed discussed. !11