Role of the substitutional oxygen donor in the residual n-type conductivity in GaN

摘要

A detailed photoluminescence (PL) study reveals a striking similarity in local vibrational properties of a defect center in GaN as compared to that for the substitutional O sub p donor in GaP. This observation could be interpreted as if teh center is in fact related to the substitutional oxygen donor in GaN. The deep-level nature experimentally determined for the defect center calls for caution of a commonly referred model that the substitutional oxygen donor is responsible for the residual n-type conductivity in GaN.