HETEROEPITAXIAL GROWTH OF PZT FILM ON (100)Ir/(100)YSZ/(100)Si SUBSTRATE STRUCTURE PREPARED BY REACTIVE SPUTTERING

摘要

A heteroepitaxial (OOl)Pb(Zr_xTi_(1-x)O_3(PZT) film was grown on the (100)Ir/(100)YSZ/Si structure with a cube-on-cube relationship by using reactive sputtering. The X-ray diffraction patterns of this sample showed that the double domain crystal layer of the (110) IrO_2 was formed between the Ir and PZT films. According to reflection high energy electron diffraction observation and X-ray photoelectron spectroscopy measurements, it was found that the initial epitaxial growth of the PZT film occurred on the Ir film. The polarization-electric field hysteresis loop of the 285-nm-thick epitaxial PZT film with the top electrode of IrO_2 showed a saturated square shape at the ac amplitude of 3V, and the remanent polarization 2Pr and the coercive field 2Ec were 80 μC/cm~2 and 100 kV/cm, respectively. The 2Pr's were not reduced up to the switching cycles of 5×10~(10) with ± 5V bipolar pulse.