Localized or delocalized electrons in microcrystalline silicon?

摘要

The temeprature dependence (4.2 -300 K) of the electron spin resonance (ESR) signal at g= 1.998 and the electronic conductivilty in microcrystalline silicon are measrued and related with each other for a series of n-type samples.In addition the hyperfine interaction with the phosphorus donor states is investigated.the ocnductivity at low temerpatures cna be interpreted as hopping in impourity states with activation energies of a few meV very similar to n-doped crystalline silicon.