In situ Auger electron spectroscopy studies of the growth of p-type microcrystalline silicon films on ZnO-coated glass substrates for microcrystalline silicon p-i-n solar cells

摘要

In situ Auger electron spectroscopy has been applied to investigate the growth process of hydrogenated microcrystalline Si (μc-Si: H)p layers on ZnO-coated glass substrates in plasma-enhanced chemical vapor deposition and the state of ZnO/p interface. A high hydrogen dilution induces a ZnO/p interface layer consisting of Si-O bonds to increase an induction period for the film growth and promotes a relaxation of strained Si-Si bond to result in a change in film growth mode from island to layer growth and a highly porous film for a nucleation of crystallites. Such changes in the initial growth influences a short circuit current of μc-Si: H p-i-n solar cells.