Compact and accurate quantum correction for MOS device simulator

摘要

A compact method of quantum-mechanical correction for MOS device models is proposed and demonstrated. In this method, carrier depletion at a MOS interface due to quantum effect is modeled with a classical carrier profile multiplied by a proper factor which is determined uniquely from material parameters of the MOS device. It can simulate n- and p-MOS capacitances at any gate voltage with the same accuracy as solving the Schrodinger equation. We further developed a compact formula of tunneling current. A combination of these two methods can simulate well experimental data and is widely applicable to conventional simulators.