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Model for estimation of metallization lifetime including electromigration and thermo-mechanical stress relaxation

机译:估算金属化寿命的模型,包括电迁移和热机械应力松弛

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摘要

Future semiconductor technologies with structural dimensions less than 0.35 #mu#m and four or more metallization layers impede the realization of the reliability requiremments due to their complexity and increasing operating conditions (>5 mA/#mu#m~2). Therefore it is necessary to provide reliability appraisal methods which ensure the operation lifetimes (up to 30 years) required by the market.
机译:未来的半导体技术具有小于0.35#Mu#M和四个或更多金属化层的结构尺寸妨碍由于其复杂性和增加的操作条件(> 5mA /#mu#m〜2)来实现可靠性要求的实现。因此,有必要提供可靠性评估方法,以确保市场所需的运行寿命(最长30年)。

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