Abstract: Short wavelength (SWIR) devices have been fabricated using boron implantation. The capacitance-voltage measurement has been used to examine the junction doping profiles. The junction doping profile can be n$+$MIN$//p type or n/p type depending on the p-side doping concentration. Only the junctions made on the lightly doped substrates show the n$+$MIN$//p type abrupt junction, with the n$+$MIN$/ region in the low 1 $MUL 10$+14$/ cm$+$MIN@3$/ range. On the heavily doped substrates, we obtain the n/p type graded junctions. The peak detectivity D*$-$lambda@p$/ performance at room temperature of the large area (A$-j$/ equals 5.9 mm$+2$/) detector was about 2.6 $MUL 10$+11$/ cm-Hz$+$HLF$//W at the zero bias. Higher D*$-$lambda@p$/ performance about 1.4 $MUL 10$+12$/ cm-Hz$+$HLF$//W was obtained on smaller area detectors at 250 K. !6
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机译：摘要：短波（SWIR）器件是使用硼注入制造的。电容电压测量已用于检查结掺杂分布。取决于p侧掺杂浓度，结掺杂分布可以是n / n $ + $ MIN $ // p型或n / p型。仅在轻掺杂衬底上制作的结显示n / n $ + $ MIN $ // p型突变结，n $ + $ MIN $ /区域低1 $ MUL 10 $ + 14 $ / cm $ + $ MIN @ 3 $ /范围。在重掺杂的衬底上，我们获得了n / p型渐变结。大面积室温下（A $ -j $ /等于5.9 mm $ + 2 $ /）检测器的峰值探测灵敏度D * $-$ lambda @ p $ /性能约为2.6 $ MUL 10 $ + 11 $ / cm -Hz $ + $ HLF $ // W为零偏差。在250 K的小面积探测器上获得了更高的D * $-$ lambda @ p $ /性能约1.4 $ MUL 10 $ + 12 $ / cm-Hz $ + $ HLF $ // W！6
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