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Impact of vacuum environment on the hot embossing process

机译:真空环境对热压花过程的影响

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One of the key questions concerning the concept of a system for hot embossing lithography is whether or not it should provide for imprinting under vacuum. We have performed experiments comparing the embossing in vacuum and in atmospheric pressure in a semi-automated imprint system. The stamps used were fully patterned, 10 cm diameter with pattern sizes ranging from 400 nm to 100 μm. It turned out that vacuum enhances the large area uniformity of the imprint by avoiding an air cushion remaining between stamp and sample during automated contact after a non-contact assembly and alignment step. Lower molecular weight polymers turned out to be more sensitive to uniformity deviation than higher molecular weight materials. Detailed analysis showed that defects typically found for relatively high processing temperatures, caused by overheated compressed air, remaining solvent in the polymer layer or even beginning polymer decomposition could be reduced substantially under vacuum embossing conditions, where the excess volume of the polymer is evacuated and free to accommodate gaseous constituents. The best result with complete cavity filling and negligible defects was obtained for imprint of a 99 kg/mol polymer at 200°C and 50 bar under vacuum. Residual layers measured across the diameter of the sample were 44.5 nm +- 9.8 nm. The non-uniformity of the residual layer is a result of the locally different pattern sizes and pattern densities of the stamp, typical for all mechanical patterning processes.
机译:关于热压浮雕光刻系统概念的关键问题之一是它是否应该在真空下提供印迹。我们在半自动压印系统中进行了比较压花和大气压力的实验。所用的印章完全图案化,直径为10厘米,图案尺寸范围为400nm至100μm。事实证明,通过避免在非接触组件和对准步骤之后,通过避免在自动接触期间保持印模和样品之间的空气缓冲,真空增强了印记的大面积均匀性。原来较低分子量的聚合物是比更高分子量的材料的均匀性偏差更为敏感。详细分析表明,通常发现由过热的压缩空气引起的相对高的加工温度的缺陷,在真空压花条件下基本上基本上减小了聚合物层中剩余的溶剂,其中聚合物的过量体积疏散并自由地减小。适应气态成分。在真空下,在200℃和50巴下的99kg / mol聚合物的压印获得完全腔填充和可忽略不计缺陷的最佳结果。在样品的直径上测量的残留层为44.5nm + - 9.8nm。残留层的不均匀性是局部不同的图案尺寸和图案密度的标记,典型的所有机械图案化工艺。

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