Application of fullerene C60 thin films as an electron-beam resist for microand nanolithography

摘要

Abstract: The paper presents the attempt of the use of theC$-60$/ thin films as a negative electron beam resist.A comparative study of C$-60$/ films polymerized by theHe-Cd laser and electron beam is made. It is shown thatunder the exposure by laser irradiation of 2.8 eVpolymerization begins from 10$+4$/ and saturates at10$+5$/ photons per fullerene molecule, whereas totalpolymerization under the electron beam requires thedose of 0.1 C/cm$+2$/. Laser irradiated films obtainedboth in air and vacuum have porous structure with voidfraction of 0.30 and 0.55 correspondingly and act as ahost lattice for intercalated oxygen. Films polymerizedby electron beam show higher polymerization degree asevidenced by ellipsometric measurements and Ramanspectra. The research conducted shows that thefullerene material is to be a promising resist for themicro- and nano-pattern manufacturing. !9