A lateral resonant pressure s ensor fabricated via fusion bonding, wafer thinning and reactive-ion-etching

摘要

A pressure sensor based uipon an electrostically driven and piezorsistively sensed `double-shuttle' lateral resonatory is presented. The sensor is fabricated using fusion bonding, wafer thinning and reactive-ion-etching. THe resontor possesses a fundametal frequency of 52 kHz and Q-factor of 1600 in air at atmospheric pressure, rising to a value of over 40 000 in high vacuum (<10~(-3) mbar). The relative pressure sensitivity of the sensor operating in closed loop mode is 3.8