A constant gate current technique for obtaining low-frequency C-V characteristics of MOS capacitors

摘要

A simple and accurate technique for low-frequency MOSFET gate capacitance measurement using the voltage response of these devices to constant gate current is described. The capability of this technique is demonstrated in Capacitance-Voltage (C-V) curves by showing the effects of gate current on the MOS characteristics. Using a Hewlett-Packard 4156 (HP4156) precision semiconductor parameter analyzer to measure the rate of voltage change across MOS capacitors while forcing a constant current, accurate C-V curve are derived over the 1pF to 1nF range.