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C-V Measurements - And Its Implication On Oxide, Transistor And Non-volatile Memory Cell Reliability

机译：C-V测量-及其对氧化物，晶体管和非易失性存储单元可靠性的影响

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《Integrated Reliability Workshop Final Report, 1998. IEEE International》|1998年|P.97-98|共2页
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Schwalke U.; Gordon B.;
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中图分类无线电电子学、电信技术;
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2. Non-volatile memory cell design: Coupling ratio impact on tunnel oxide reliability [J] . Bouquet V, Canet P, Lalande F, Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2005,第21a23期

机译：非易失性存储单元设计：耦合比对隧道氧化物可靠性的影响
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机译：非易失性存储器技术新型垂直MOS晶体管的交流应力可靠性研究
4. C-V Measurements - And Its Implication On Oxide, Transistor And Non-volatile Memory Cell Reliability [C] . Schwalke U., Gordon B., Institute of Electric and Electronic Engineer IEEE International Integrated Reliability Workshop . 1998

机译：C-V测量 - 及其对氧化物，晶体管和非易失性存储器电池可靠性的含义
5. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics. [D] . Suresh, Arun. 2009

机译：透明电子用非晶铟镓锌氧化物薄膜晶体管，非易失性存储器和电路。
6. Zinc oxide nanorod field effect transistor for long-time cellular force measurement [O] . Xianli Zong, Rong Zhu -1

机译：氧化锌纳米棒场效应晶体管用于长期细胞力测量
7. Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric [O] . A. Saeidi, A. Biswas, Adrian M. Ionescu 2016

机译：低功率铁电非易失性存储器隧道场效应晶体管的建模与仿真使用硅掺杂氧化铪作为栅极电介质

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