Power performance of PNP InAlAs/InGaAs HBTs

摘要

Recently, small-signal microwave performance has been reported for PNP InAlAs/InGaAs HBTs. While power performance of PNP AlGaAs/GaAs HBTs has been demonstrated, nothing has been reported on power performance of PNP HBTs in the InP material system. In this work, InAlAs/InGaAs PNP HBTs were fabricated and subsequently characterized under large signal conditions at X-band to determine their suitability for high-frequency power applications. PNP HBTs demonstrated f/sub T/ and f/sub max/ as high as 13 and 35 GHz, respectively. Power performance at 10 GHz was comparable to InP-based NPN single HBTs, providing up to 10 dB of gain, 0.49 mW//spl mu//sup 2/ of output power, and 24% power-added efficiency. Analysis of these HBTs suggests further design and epilayer optimizations for increased power performance.