New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials

摘要

This paper introduces a new approach, based on Room Temperature (RT) Scanning Photoluminescence (SPL) measurements, for non-destructive quantitative mapping of the surface or interface recombination velocity in compound semiconductor structures. The developed technique is validated and applied here to spatially resolved evaluation of the surface recombination velocity of InP substrates and InGaAs(C)/InP heterostructures.