Low driving current 1.3-/spl mu/m beam-expander integrated laser diode with n-type modulation doped multiple quantum wells

摘要

The driving current of a 1.3-/spl mu/m beam-expander (BEX) integrated laser diode was dramatically reduced by using n-type modulation doped multiple-quantum-well active layer. The threshold current at 85/spl deg/C was 28.0 mA and the slope efficiency was 0.3 W/A. In a temperature range from -30/spl deg/C to 85/spl deg/C, a record high characteristic temperature T/sub 0/ of 86. 1 K and the slope efficiency degradation /spl Delta//spl eta/ as low as (-30/spl deg/C-85/spl deg/C)-1.6 dB were achieved.