In-situ characterization and modeling of MOVPE for optoelectronic devices

摘要

In-situ characterization of the epitaxial growth is necessary for understanding the growth mechanism as well as for logical optimization of growth parameters. This paper describes in-situ diagnostics of metal-organic vapor phase epitaxy (MOVPE) through the use of spectroscopic/kinetic ellipsometry for the solid phase and surface monitoring, and of the Fourier-transform infrared spectroscopy (FT-IR) for the gas phase characterization. Modeling and simulation of the MOVPE growth based on the FT-IR measurement are also introduced, for better understanding and control of the epitaxial growth for photonic device applications.