Evaluation of internal efficiency and waveguide loss of 50 nm-period GaInAsP/InP quantum-wire lasers

摘要

Internal quantum efficiency /spl eta//sub i/ of GaInAsP/InP 20 nm-wide quantum-wire lasers with a period of 50 nm, fabricated by electron-beam lithography, wet chemical etching and OMVPE embedding growth, was evaluated from the cavity length dependence of the differential quantum efficiency. As the result, high internal quantum efficiency /spl eta//sub i//spl sim/1.0 was obtained at T>200 K, while it decreased with an increase of temperature.