Effect of phosphine plasma on suppression of plasma-induced defects in InGaAs

摘要

Electron traps at and near the surface of InGaAs treated with Ar plasma are investigated by isothermal capacitance transient spectroscopy measurements. Two electron traps are detected and designated as E1 and E2. The E1 and E2 traps are located at 0.35 eV and 0.48 eV below the conduction band edge, respectively. In the case when InGaAs is treated with PH/sub 3/-added Ar plasma, a significant reduction in the densities of both E1 and E2 traps occurs in comparison with those of Ar-plasma-treated InGaAs. It is found that phosphorus atoms are effective in suppressing generation of electron traps in InGaAs.