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Planar selective re-growth around a dry-etched mesa along the 11~0 direction by addition of HCl during MOCVD growth

机译：在MOCVD生长期间，通过添加HCl，沿11〜0方向在干蚀刻台面周围选择性地重新生长

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《Indium Phosphide and Related Materials, 1998 International Conference on》|1998年|P.321-324|共4页
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Suzuki; D.; Kimura; T.;
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中图分类无线电电子学、电信技术;
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1. A new technique to fabricate ultra-shallow-junctions, combining in situ vapour HCl etching and in situ doped epitaxial SiGe re-growth [J] . Loo R., Caymax M., Meunier-Beillard P., Applied Surface Science . 2004,第1a4期

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2. Re-growth of an incomplete discoid lateral meniscus after arthroscopic partial resection in an 11?year-old boy: a case report [J] . Salvatore Bisicchia, Cosimo Tudisco BMC Musculoskeletal Disorders . 2013,第1期

机译：一名11岁男孩的关节镜部分切除后不完全盘状外侧半月板的重新生长：一例报告
3. An etching and re-growth method for the synthesis of bismuth ferrite/MIL-53(Fe) nanocomposite as efficient photocatalyst for selective oxidation of aromatic alcohols [J] . Applied Catalysis, B. Environmental: An International Journal Devoted to Catalytic Science and Its Applications . 2020,第期

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4. Planar selective re-growth around a dry-etched mesa along the 11~0 direction by addition of HCl during MOCVD growth [C] . Suzuki D., Kimura T., Institute of Electric and Electronic Engineer International Conference on Indium Phosphide and Related Materials . 1998

机译：通过加入HCl在MOCVD生长期间，平面围绕干蚀刻的台膜选择性重新生长围绕11〜0方向
5. Heteroepitaxial Thick GaN Layers and Vertical High-Power Devices by Selective Area MOCVD Growth [D] . Tanaka, Atsunori. 2019

机译：通过选择性地区MOCVD生长的异膜厚GaN层和垂直大功率器件
6. Re-growth of an incomplete discoid lateral meniscus after arthroscopic partial resection in an 11 year-old boy: a case report [O] . Salvatore Bisicchia, Cosimo Tudisco 2013

机译：一名11岁男孩经关节镜部分切除后不完全盘状外侧半月板的重新生长：一例报告
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