Waveguide-integrated InP/InGaAs/InAlGaAs MSM photodetector for operation at 1.3 and 1.55 /spl mu/m

摘要

High-speed multi-wavelength waveguide-integrated metal-semiconductor-metal (MSM) photodetectors based on MOCVD grown InP/lnGaAs/InAlGaAs layers are reported. The evanescent field coupled detectors have an absorbing layer thickness of only 150 nm and an electrode feature size as small as 0.3 /spl mu/m. An internal coupling efficiency of /spl ges/90% has been achieved for detector lengths as short as 20 /spl mu/m and 30 /spl mu/m at 1.3 and 1.55 /spl mu/m wavelength, respectively. A 3-dB bandwidth of 50 GHz at 1.55 /spl mu/m wavelength has been obtained.