Suppression of reverse bias tunneling current in HgCdTe photodiodes formed by rapid thermal diffusion

摘要

Abstract: In this paper, we report electrical and opticalproperties of the rapid thermal diffused (RTD) p-njunction photodiodes fabricated on LPE-grown p-typeHg$-0.70$/Cd$-0.30$/Te/CdZnTe substrate. In comparisonwith the ion implanted p-n junction on the samesubstrate, the reverse bias tunneling current isdrastically suppressed in the RTD junction. Thespectral photo-response of indium diffused HgCdTephotodiode shows the high quantum efficiency and thedetectivity of 1.3 by 10$+11$/ cm/Hz$+$HLF$/W. Thesuppression of the reverse bias leakage current, highquantum efficiency and low noise of the RTD photodiodecould be explained by the suppression of the electricalactive defects generation in the depletion regionduring the junction formation. The extracted carrierlifetime in the junction depletion region of the RTDHgCdTe photodiodes is larger than that of theion-implanted one. !4