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Theory of momentum orientation relaxation in semiconductors

机译:半导体中动量取向弛豫理论

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Abstract: We present numerical results for charge-carrier relaxation processes by carrier-carrier scattering in various semiconductor structures. Common to all examples is the aspect of anisotropy. Our results are based on a generalized quantum Boltzmann equation. Specifically, we solve the Kadanoff-Bayn equations for the relevant two-time Green's function. The systems under consideration are bulk GaAs with anisotropically photo-excited electrons and hexagonal CdS. !19
机译:摘要:我们通过载流子-载流子散射在各种半导体结构中给出了载流子-载流子弛豫过程的数值结果。所有示例的共同点是各向异性。我们的结果基于广义量子玻尔兹曼方程。具体来说,我们为相关的二次格林函数求解Kadanoff-Bayn方程。所考虑的系统是具有各向异性光激发电子和六方CdS的体GaAs。 !19

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